c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf f f f f 830 830 830 830 rev.a nov .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 4.5a,500v,r ds(on)( max 1.5 )@v gs =10v ultra-low gate charge(typical 32nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 4.5 * a continuous drain current(@tc=100 ) 2.9 * a i dm drain current pulsed (note1) 18 * a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 300 mj e ar repetitive avalanche energy (note 1) 7.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=25 ) 38 w derating factor above 25 0.3 w/ t j, t stg junction and storage temperature -55~150 t l channel temperature 300 *drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 3.3 /w r qja thermal resistance, junction-to-ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 2 / 7 electrical characteristics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 50 0 v, v gs = 0 v - - 1 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 5 00 - - v break voltage temperature coefficient bv dss / tj i d =250 a, referenced to 25 - 0. 55 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 2.25 a - 1.16 1.5 forward transconductance gfs v ds = 4 0 v, i d = 2.25 a - 4.2 - s input capacitance c iss v ds = 25 v, v gs = 0 v , f = 1 mhz - 800 1050 pf reverse transfer capacitance c rss - 1 8 2 3 output capacitance c oss - 76 100 switching time rise time tr v dd = 250 v, i d = 4.5 a r g = 25 (note4,5) - 15 40 ns turn ? on time ton - 40 90 fall time tf - 85 180 turn ? off time toff - 45 100 total gate charge (gate ? source plus gate ? drain) qg v dd = 400 v, v gs = 10 v, i d = 4.5 a (note4,5) - 32 44 nc gate ? source charge qgs - 3.7 - gate ? drain ( miller ) charge qgd - 15 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 4.5 a pulse drain reverse current i drp - - - 18 a forward voltage (diode) v dsf i dr = 4.5 a, v gs = 0 v - - 1.4 v reverse recovery time t rr i dr = 4.5 a, v gs = 0 v, di dr / dt = 100 a / s - 305 - ns reverse recovery charge q rr - 2.6 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=24mh,i as =4.5a,v dd =50v,r g =25 ,starting t j =25 3.i sd 4.5a,di/dt 300a/us, v dd steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer current characteristics fig. 3 capacitance variation vs drain voltage fig. 4 breakdown voltage variation vs temperature fig. 5 on-resistance variation vs.junctiontemperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 4 / 7 fig. 7 maximum safe operation area fig. 8 maximum drain current vs case temperature fig. 9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 5 / 7 fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 830 830 830 830 7 / 7 to-220 to-220 to-220 to-220 f f f f package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
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